Abstract
Electronically symmetric coupled double quantum wells are structures where two quantum wells are separated by a thin barrier layer. Both experiment and theory show that when the barrier is so narrow that there is considerable overlap of wave functions in the two wells, the single quantum well electronic one-particle states split into symmetric and antisymmetric states with different energy levels. The splitting of energy levels is very sensitive to barrier width and barrier height and increases with decreasing barrier width and with decreasing barrier height.
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References
Glembocki, O. J., Shanbrook, B. V. (1992) Photoreflectance spectroscopy of microstructures, in D. G. Seiler and C. L. Littler (eds.), Semiconductors and Semimetals, Academic Press, New York, vol. 36, pp. 221–292.
Pollak, F. H (1994) Modulation spectroscopy of semiconductors and semiconductor microstructures, in M. Balkanski (ed.), Handbook on Semiconductors, Elsevier Science, Amsterdam, vol. 2, pp. 527–635.
Misiewicz, J., Jezierski, K., Sitarek, P., Markiewicz, P., Korbutowicz, R., Panek, M., Sciana, B., and Tlaczala, M. (1995) Photoreflectance characterisation of GaAs/AlGaAs structures grown by MOCVD, Adv. Mater. Opt. Electron 5, pp. 321–324.
Bastard, G. (1992) Wave mechanics applied to semiconductor heterostructures, Les Editions de Physique, Paris, pp. 31–61.
Worren, T., Ozanyan, K.B., Hunden, O., Martelli, F. (1998) Above-barrier states in InxGa1-xAs/GaAs multiple quantum well with a thin cap layer, Phys. Rev. B 58 pp. 3977–3988, and references therein.
Adachi, S. (1985) GaAs, and AlxGa1-xAs: Material parameters for use in research and device applications, J.Appl.Phys 58 pp. R1–R29.
Bayer, M., Timofeev, V.B., Faller, F., Gutbrod, T., and Forchel, A. (1996) Direct and indirect excitons in coupled GaAs/Al0.3Ga0.7As double quantum wells separated by AlAs barriers, Phys. Rev. B 54 pp. 8799–8808.
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© 2000 Springer Science+Business Media Dordrecht
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Sęk, G. et al. (2000). Optical Investigation of Coupled GaAs/Al0.3Ga0.7As Double Quantum Wells Separated by AIAs Barriers. In: Sadowski, M.L., Potemski, M., Grynberg, M. (eds) Optical Properties of Semiconductor Nanostructures. NATO Science Series, vol 81. Springer, Dordrecht. https://doi.org/10.1007/978-94-011-4158-1_10
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DOI: https://doi.org/10.1007/978-94-011-4158-1_10
Publisher Name: Springer, Dordrecht
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