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Optical Investigation of Coupled GaAs/Al0.3Ga0.7As Double Quantum Wells Separated by AIAs Barriers

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Optical Properties of Semiconductor Nanostructures

Part of the book series: NATO Science Series ((ASHT,volume 81))

Abstract

Electronically symmetric coupled double quantum wells are structures where two quantum wells are separated by a thin barrier layer. Both experiment and theory show that when the barrier is so narrow that there is considerable overlap of wave functions in the two wells, the single quantum well electronic one-particle states split into symmetric and antisymmetric states with different energy levels. The splitting of energy levels is very sensitive to barrier width and barrier height and increases with decreasing barrier width and with decreasing barrier height.

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© 2000 Springer Science+Business Media Dordrecht

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Sęk, G. et al. (2000). Optical Investigation of Coupled GaAs/Al0.3Ga0.7As Double Quantum Wells Separated by AIAs Barriers. In: Sadowski, M.L., Potemski, M., Grynberg, M. (eds) Optical Properties of Semiconductor Nanostructures. NATO Science Series, vol 81. Springer, Dordrecht. https://doi.org/10.1007/978-94-011-4158-1_10

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  • DOI: https://doi.org/10.1007/978-94-011-4158-1_10

  • Publisher Name: Springer, Dordrecht

  • Print ISBN: 978-0-7923-6317-0

  • Online ISBN: 978-94-011-4158-1

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