Abstract
Phase transformations occurring in materials under contact loading are important for a wide range of problems in materials science and engineering. We studied solid-state phase transformation, including metallization and amorphization of semiconductors under high non-hydrostatic pressures using a combination of hardness indentation tests, scratch tests, Raman spectroscopy, FTIR and various microscopic techniques. Our experiments demonstrated metallization due to closing of the band gap and consequent formation of metastable phases upon decompression in silicon, germanium and several other semiconductors. For the first time high-pressure, these phases were unambiguously observed in hardness impressions, scratches and machining debris, and for some of these phases Raman spectra have not been published before.
The data obtained confirm that the hardness level of many semiconductors depends on the stress (deformation) needed to initiate the transformation. It may help to choose and/or optimize conditions of ductile-regime machining of semiconductors, as well as give new insights into their surface properties. Information on the phase transformations in the surface layer of materials resulting from contact interactions is important for understanding the mechanisms of wear, friction and erosion.
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References
Brazhkin, V.V. and A.G. Lyapin, Lattice Instability Approach to the Problem of High-Pressure Solid-State Amorphization, High Pressure Research,15, 9–30 (1996).
Cahn, R.W., Metallic Solid Silicon, Nature, 357, 645–646 (1992).
Gilman, J.J. Mechanism of Shear-Induced Metallization, Czech J. Phys. 45, 913–919 (1995).
Gogotsi, Y.G., A. Kailer, K.G. Nickel, Phase Transformations in Materials Studied by Micro-Raman Spectroscopy of Indentations, Materials Research Innovations, 1 (1) 3–9 (1997).
Clarke, D.R., M.C. Kroll, P.D. Kirchner, R.F. Cook, B.J. Hockey, Amorphization and Conductivity of Silicon and Germanium Induced by Indentation, Phys. Rev. Lett . 60, 2156–2159 (1988).
Gridneva, I.V., Y.V. Milman, and V.I. Trefilov, Phase Transition in Diamond-Structure Crystals During Hardness Measurements, Phys. Stat. Solidi 9(14), 177 (1972).
Pharr, G.M., W. C. Oliver, R. F. Cook, P. D. Kirchner, M. C. Kroll, T. R. Dinger, and D. R. Clarke, Electrical resistance of metallic contacts on silicon and germanium during indentation, J. Mater. Res. 7, 961 (1992).
Pharr, G.M., W.C. Oliver, D.S. Harding, New Evidence for a Pressure-Induced Transformation During the Indentation of Silicon, J. Mater. Res. 6, 1129–1130 (1991).
Weppelmann, E.R., J.S. Field and M.V. Swain, Influence of spherical indentor radius on the indentation-induced transformation behavior of silicon, J. Mater. Sci. 30, 2455 (1995).
Gilman, J.J. Insulator-metal Transitions at Microindentations, J. Mater. Res. 7, 535–538 (1992).
Weppelmann, E.R., J.S. Field and M.V. Swain, Observation, Analysis and Simulation of the Hysteresis of Silicon Using Ultra-micro-indentation with Spherical Indenters, J. Mater. Res. 8, 830–840 (1993).
Callahan, D.L. and J.C. Morris, Extent of Phase Transformation in Silicon Hardness Indentations, J. Mater. Res., 7 1614–1617 (1992).
Morris, J. C., D. L. Callahan, The microstructure of indentation (hardness) impressions in silicon and germanium, in Microstructure of Materials, Ed. K. M. Krishnan, San Francisco Press, San Francisco, CA, p. 104 (1992).
Morris, J.C., D.L. Callahan, J. Kulik, J.A. Patten, R.O., Scattergood, Origins of Ductile Regime in Single-Point Diamond Turning of Semiconductors, J. Am. Ceram. Soc. 78, 2015–2020 (1995).
Morris, J.C., D.L. Callahan, Origins of Microplasticity in Low-Load Scratching of Silicon, J. Mater. Res. 9, 2907–2913 (1994).
Ferraro, J.R., Vibrational Spectroscopy at High External Pressures: The diamond anvil cell, Academic Press, Orlando, 1984.
Jayaraman, A., Diamond Anvil Cell and High-Pressure Physical Investigations, Rev. Modern Phys. 55, 65–108 (1983).
Crain, J., G.J. Ackland, J.R. Maclean, R.O. Piltz, P.D. Hatton, G.S. Pawley, Reversible Pressure-Induced Structural Transitions Between Metastable Phases Of Silicon, Phys. Rev. B, 50, 13043–46 (1994)
Di Gregorio, J.F., T.E. Furtak, Analysis of Residual Stress in 6H-SiC Particles within Al2O3/SiC Composites through Raman Spectroscopy, J.Am. Ceram. Soc. 75, 1854–1857 (1992):
Lucazeau, G., L. Abello, Raman Spectroscopy in Solid State Physics and Material Science. Theory, Techniques and Applications, Analusis, 23, 301–311 (1995).
Sparks R.G. and M.A. Raesler, Micro-Raman Analysis of Stress in Machined Silicon and Germanium, Prec. Eng. 10, 191 (1988).
Shen, H. and F. Pollack, Raman Study of Polish-Induced Strain in <100> and <111> GaAs and InP, J.Appl. Phys. 64, 3233 (1988).
Lucazeau, G., L. Abello, Micro-Raman Analysis of Residual Stresses and Phase Transformations in Crystalline Silicon under Micro-Indentation, J.Mater.Res., 12, 2262–2273 (1997).
Jameison, J.C., Crystal Structures at High Pressures of Metallic Modifications of Silicon and Germanium, Science, 139, 762 (1963).
Minomura, S. and H.G. Drickamer, Pressure-Induced Phase Transformations in Silicon, Germanium, and Some III-V Compounds, J. Phys. Chem. Solids,23 451 (1962).
Needs, R.J. and A. Mujica, First-principles pseudopotential study of the structural phases of silicon, Phys. Rev. B 51, 9652–60 (1995).
Wentorf, R.H. and J.S. Kasper, Two New Forms of Silicon, Science, 139 338 (1963).
Clarysse, P., P. De Wolf, H. Bender, and W. Vandervorst, Recent Insights Into The Physical Modeling of The Spreading Resistance Point Contact, J. Vac. Sci. Technol. B 14, 358–68 (1996).
Piltz, R.O., J.R. Maclean, S.J. Clark, G.J. Ackland, P.D. Hatton, J. Crain, Structure and properties of silicon XII: A complex tetrahedrally bonded phase Phys. Rev. B 52, 4072–85 (1995).
Hanfland, M. and K. Syassen, Raman Modes of Metastable Phases of Si and Ge, High Pressure Res. 3, 242–44 (1990).
Kailer, A., Y.G. Gogotsi, K.G. Nickel, Phase Transformations of Silicon Caused by Contact LoadingJ. Appl. Phys. 81 (7) (1997).
Bates, C.H., F. Dachille, R. Roy, High-Pressure Transitions of Germanium and a New High-Pressure Form of Germanium, Science, 147, 860–862 (1965).
Kasper, J.S., S.H. Richards, The Crystal Structures of New Forms of Silicon and Germanium, Acta Crystallographica, 1964, 17, 752–755.
Nelmes, R.J., M.I. McMahon, N.G. Wright, D.R. Allan, J.S. Loveday, Stability and Crystal Structure of BC8 Germanium, Phys. Rev. B, 48, 9883–86 (1993).
Nagata, K., Webb, S.J., R.A. Stralding, Raman Spectra of InAs1-xSbx. Alloys and InAs0.58Sb0.42/InSb Strained Layer Superlattice under High Pressure, Phys. Stat. Sol. (b) 198, 527–532 (1996).
Gilman, J.J. Metallization at Microindentations, in Mat. Res. Soc. Symp. Proc., 276, 191–196, MRS (1992).
Biffano, T.G., T.A. Dow, R.O. Scattergood, Ductile-Regime Grinding: a New Technology for Machining Brittle Materials, J. Engng. for Industry, 113, 184–189 (1991).
Blake, P.N. and R.O. Scattergood, Ductile-Regime Machining of Germanium and Silicon, J. Am. Ceram. Soc. 73, 949–957 (1990).
Lucca, D.A., Y.W. Seo, Effect of Tool-Edge Geometry on Energy Dissipation in Ultraprecision Machining, CIRP Ann., 42 (1) 83 (1993).
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Gogotsi, Y., Rosenberg, M.S., Kailer, A., Nickel, K.G. (1998). Phase Transformations in Semiconductors Under Contact Loading. In: Bhushan, B. (eds) Tribology Issues and Opportunities in MEMS. Springer, Dordrecht. https://doi.org/10.1007/978-94-011-5050-7_30
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DOI: https://doi.org/10.1007/978-94-011-5050-7_30
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