On the Quantum Capacitance of Quantum Wire Field-Effect Transistors of Compound Semiconductors

Abstract

This chapter explores the quantum capacitance ($C_{\text{g}}$) in quantum wire field-effect transistors (QWFETs) manufactured from completely different technologically vital nonstandard materials by using all types of anisotropies of band structures in addition to splitting of bands due to large fields of the crystals inside the framework of Kane’s matrix methodology that successively generates new 1D dimensional electron energy versus wave vector relation. We derive the $C_{\text{g}}$  under very low temperature so that the Fermi function tends to unity for QWFETs of ${\text{Cd}}_{3} {\text{As}}_{2} ,{\text{CdGeAs}}_{2} ,{\text{InSb}},{\text{Hg}}_{1 - x} {\text{Cd}}_{x} {\text{Te}},{\text{InAs}},{\text{GaAs}},{\text{In}}_{1 - x} {\text{Ga}}_{x} {\text{As}}_{y} {\text{P}}_{1 - y}$ IV–VI, stressed materials,${\text{Te}},{\text{GaP,PtSb}}_{2} ,{\text{Bi}}_{2} {\text{Te}}_{3} ,{\text{Ge}},{\text{GaSb}}$ and II–V compounds using the appropriate band models. The $C_{\text{g}}$ becomes the functions of the thickness of the quantum-confined transistors. The $C_{\text{g}}$ varies with varying film thickness in various quantized steps and saw-tooth manners with different numerical values.