Abstract
In this paper, for the first time, the transfer characteristic of a ‘U’-shaped gated tunnel FET (TFET) has been thoroughly investigated considering the real-time adverse effects of gate-to-drain direct tunneling current and gate-induced drain leakage (GIDL) effect using SILVACO ATLAS device simulator. Clearly, these leakage phenomena degrade the device performance, especially for low standby power (LSTP) operation. Hence, for the first time, a novel design modification has been proposed in terms of the optimization of the oxide thickness (TGD) of right vertical arm of the U-shaped gate, in order to mitigate the aforementioned problem. It has been found that when the TGD value is increased to 7 nm from the equivalent oxide thickness (EOT) value of 1.6 nm, the ultimate device becomes optimized in terms of the performance matrices like, IOFF, SSmin, ION/IOFF, etc. Moreover, 43% reduction in delay and almost 11 decades of OFF-state power reduction have been obtained for the optimized device than that of the device having TGD = 1.6 nm, for gate length of 70 nm.
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Das, S., Chattopadhyay, A., Tewari, S. (2021). Minimization of Drain-End Leakage of a U-Shaped Gated Tunnel FET for Low Standby Power (LSTP) Application. In: Nath, V., Mandal, J. (eds) Nanoelectronics, Circuits and Communication Systems. Lecture Notes in Electrical Engineering, vol 692. Springer, Singapore. https://doi.org/10.1007/978-981-15-7486-3_36
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DOI: https://doi.org/10.1007/978-981-15-7486-3_36
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