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Study of High-Frequency Performance in GeSn-Based QWIP

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Computers and Devices for Communication (CODEC 2019)

Part of the book series: Lecture Notes in Networks and Systems ((LNNS,volume 147))

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Abstract

QWIP using group IV elements are of great research attention for its potential application in optical communication and in optical interconnects. The high-frequency performance of GeSn–SiGeSn QWIP has been studied considering the intersubband transition and transit time effect of electrons. The band structure of GeSn–SiGeSn QWIP and the analytical results of responsivity are also presented in this paper.

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Acknowledgements

The first author (SG) acknowledges the joint Indo-Taiwan Research project high responsivity GeSn short-wave infrared phototransistor. The second author (SD) acknowledges support by TEQIP-Phase III under University College of Technology-Calcutta University (UCT-CU) through the award of a fellowship.

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Authors and Affiliations

  1. Institute of Radio Physics and Electronics, University of Calcutta, 92, Acharya Prafulla Chandra Road, Kolkata, West Bengal, 700009, India

    Soumava Ghosh, Swagata Dey, Bratati Mukhopadhyay & Gopa Sen

Authors
  1. Soumava Ghosh
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  2. Swagata Dey
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  3. Bratati Mukhopadhyay
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  4. Gopa Sen
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Corresponding author

Correspondence to Swagata Dey .

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Editors and Affiliations

  1. Institute of Radio Physics and Electronics, University of Calcutta, Kolkata, India

    Nikhil Ranjan Das

  2. Institute of Radio Physics and Electronics, University of Calcutta, Kolkata, India

    Santu Sarkar

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Ghosh, S., Dey, S., Mukhopadhyay, B., Sen, G. (2021). Study of High-Frequency Performance in GeSn-Based QWIP. In: Das, N.R., Sarkar, S. (eds) Computers and Devices for Communication. CODEC 2019. Lecture Notes in Networks and Systems, vol 147. Springer, Singapore. https://doi.org/10.1007/978-981-15-8366-7_66

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  • DOI: https://doi.org/10.1007/978-981-15-8366-7_66

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  • Publisher Name: Springer, Singapore

  • Print ISBN: 978-981-15-8365-0

  • Online ISBN: 978-981-15-8366-7

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