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Performance Enhancement of InGaN/GaN Green QW LEDs with Different Interlayers and Doping in the Barriers

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Computers and Devices for Communication (CODEC 2019)

Part of the book series: Lecture Notes in Networks and Systems ((LNNS,volume 147))

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Abstract

The effect of introducing an InAlN or AlGaN IL (interlayer) in between the barrier and QW for the green emission has been studied. The tensile strain of AlGaN compensates the compressive strain of InGaN/GaN interface. The IL increases the barrier potential and reduces the carrier leakage from the QW. These increase the device efficiency. By changing the doping in the barrier, the optical output can be increased for green QW LEDs with and without interlayer. The best results are obtained for the AlGaN IL which increases the transition probability up to 2 times, as compared to the QW LEDs, without IL.

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Authors and Affiliations

  1. Institute of Radiophysics and Electronics, University of Calcutta, 92 A. P. C. Road, Kolkata, 700009, India

    Apu Mistry & Dipankar Biswas

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  1. Apu Mistry
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  2. Dipankar Biswas
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Correspondence to Apu Mistry .

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Editors and Affiliations

  1. Institute of Radio Physics and Electronics, University of Calcutta, Kolkata, India

    Nikhil Ranjan Das

  2. Institute of Radio Physics and Electronics, University of Calcutta, Kolkata, India

    Santu Sarkar

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Mistry, A., Biswas, D. (2021). Performance Enhancement of InGaN/GaN Green QW LEDs with Different Interlayers and Doping in the Barriers. In: Das, N.R., Sarkar, S. (eds) Computers and Devices for Communication. CODEC 2019. Lecture Notes in Networks and Systems, vol 147. Springer, Singapore. https://doi.org/10.1007/978-981-15-8366-7_71

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  • DOI: https://doi.org/10.1007/978-981-15-8366-7_71

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  • Publisher Name: Springer, Singapore

  • Print ISBN: 978-981-15-8365-0

  • Online ISBN: 978-981-15-8366-7

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