Abstract
In this work, a theoretical model developed for the Ge-Si0.12Ge0.73Sn0.15/Si0.11Ge0.73Sn0.16 n-p-n mid-infrared transistor laser (TL) with strain-balanced Ge0.85Sn0.15 multiple quantum well (QW) in the base. The variation of optical confinement factor and modal gain for different number of QWs is also calculated. The result shows that overall optical confinement factor and modal gain increase with the number of QW.
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Ranjan, R., Pareek, P., Das, M.K. (2021). Analysis of Modal Gain in Tin-Incorporated Group-IV Alloys Based Multiple Quantum Well Transistor Laser. In: Singh, K., Gupta, A.K., Khare, S., Dixit, N., Pant, K. (eds) ICOL-2019. Springer Proceedings in Physics, vol 258. Springer, Singapore. https://doi.org/10.1007/978-981-15-9259-1_162
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DOI: https://doi.org/10.1007/978-981-15-9259-1_162
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