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Parasitic Series Resistance for 4H-SiC and Diamond-Based IMPATT Diode at Ku Band

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Advances in VLSI, Communication, and Signal Processing

Part of the book series: Lecture Notes in Electrical Engineering ((LNEE,volume 587))

Abstract

In this work, parasitic series resistance (Rs) has been computed for IMPATT using 4H-SiC and diamond at Ku band. Rs is calculated from the conductance- susceptance profile of the IMPATT. Rs of 4H-SiC was found to be less than diamond at the corresponding frequency. As 4H-SiC is having lesser Rs value than diamond, it can deliver more power to the output RF circuit as compared to diamond-based IMPATT diode.

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References

  1. Midford, T.A., Bernick, R.L.: Millimeter wave CW IMPATT diodes and oscillators. IEEE Trans. Microw. Theory Tech. 27, 483–492 (1979). https://doi.org/10.1109/TMTT.1979.1129653

    Article  Google Scholar 

  2. Roy, U.C., Gupta, A.K.: Measurement of electrical series resistance of W-band Si IMPATT diode. In: Proceedings of 2nd Asia Pacific Microwave Conference, Beijing, China (1988)

    Google Scholar 

  3. Miswa, T.: Multiple uniform layer approximation in analysis of negative resistance in p-n junction in breakdown. IEEE Trans. Electron Devices 14, 795 (1967). https://doi.org/10.1109/T-ED.1967.16113

    Article  Google Scholar 

  4. Alderstein, M.G., Holway, L.F., Chu, S.L.G.: Measurement of series resistance in IMPATT diodes. IEEE Trans. Electron Devices 30, 179–182 (1983). https://doi.org/10.1109/T-ED.1983.21092

    Article  Google Scholar 

  5. Mitra, M., Das, M., Kar, S., Roy, S.K.: A study of the electrical series resistance of silicon IMPATT diodes. IEEE Trans. Electron Devices 40, 1890–1893 (1993). https://doi.org/10.1109/16.277354

    Article  Google Scholar 

  6. Ghivela, G.C., Sengupta, J., Mitra, M.: Ka band noise comparison for Si, Ge, GaAs, InP, WzGaN, 4H-SiC based IMPATT diode. Int. J. Electron. Lett. 7, 107–116 (2019). https://doi.org/10.1080/21681724.2018.1460869

    Article  Google Scholar 

  7. Ghivela, G.C., Sengupta, J.: Prospects of impact avalanche transit time diode based on chemical vapor deposited diamond substrate. J. Electron. Mater. 48, 1044–1053 (2019). https://doi.org/10.1007/s11664-018-6821-5

    Article  Google Scholar 

  8. Sengupta, J., Ghivela, G.C., Mitra, M.: Dynamic characterization and noise analysis of 4H-SiC IMPATT diode at Ka band. Int. J. Soft Comput. Eng. 4, 145–149 (2014)

    Google Scholar 

  9. Sengupta, J., Ghivela, G.C., Gajbhiye, A., Mitra, M.: Measurement of noise and efficiency of 4H-SiC IMPATT diode at Ka band. Int. J. Electron. Lett. 4, 134–140 (2016). https://doi.org/10.1080/21681724.2014.966774

    Article  Google Scholar 

  10. Ghivela, G.C., Sengupta, J., Mitra, M.: Space charge effect of IMPATT diode using Si, Ge, GaAs, InP, WzGaN, 4H-SiC at Ka band. IETE J. Educ. 58, 61–66 (2017). https://doi.org/10.1080/09747338.2017.1378132

    Article  Google Scholar 

  11. Sengupta, J., Ghivela, G.C., Gajbhiye, A., Jothe, B., Mitra, M.: Temperature dependence of 4H-SiC IMPATT diode at Ka band. Int. J. Electr. Electron. Comput. Syst. 19, 1–5 (2014)

    Google Scholar 

  12. Brooker, G.M.: Long-range imaging radar for autonomous navigation. Ph.D. dissertation, University of Sydney. Aerospace, Mechanical and Mechatronic Engineering, p. 231 (2006)

    Google Scholar 

  13. Trew, R.J., Yan, J.B., Mock, P.M.: The potential of diamond and SiC electronic devices for microwave and millimeter wave power applications. Proc. IEEE 79, 598–620 (1991). https://doi.org/10.1109/5.90128

    Article  Google Scholar 

  14. Watanabe, T., Teraji, T., Ito, T., Kamakura, Y., Taniguchi, K.: Monte Carlo simulations of electron transport properties of diamond in high electric fields using full band structure. J. Appl. Phys. 95, 4866–4874 (2004). https://doi.org/10.1063/1.1682687

    Article  Google Scholar 

  15. Pal, T.K.: Series resistance of silicon millimeter wave (Ka-Band) IMPATT diodes. Def. Sci. J. 59, 1–5 (2009)

    Google Scholar 

  16. Scharfetter, D.L., Gummel, H.K.: Large-signal analysis of a silicon read diode oscillator. IEEE Trans. Electron Devices 16, 64–77 (1969). https://doi.org/10.1109/T-ED.1969.16566

    Article  Google Scholar 

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Authors and Affiliations

  1. Electronics and Telecommunication Engineering Department, Government Polytechnic College, Itarsi, 461446, India

    Bhupendra Jothe

  2. Electronics and Communication Engineering Department, Visvesvaraya National Institute of Technology, Nagpur, 440010, India

    Girish Chandra Ghivela & Joydeep Sengupta

Authors
  1. Bhupendra Jothe
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  2. Girish Chandra Ghivela
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  3. Joydeep Sengupta
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Corresponding author

Correspondence to Bhupendra Jothe .

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Editors and Affiliations

  1. Ministry of Electronics and Information Technology, New Delhi, Delhi, India

    Debashis Dutta

  2. Motilal Nehru National Institute of Technology Allahabad, Allahabad, Uttar Pradesh, India

    Haranath Kar

  3. Indian Institute of Technology (ISM), Dhanbad, Jharkhand, India

    Chiranjeev Kumar

  4. Motilal Nehru National Institute of Technology Allahabad, Allahabad, Uttar Pradesh, India

    Vijaya Bhadauria

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Jothe, B., Ghivela, G.C., Sengupta, J. (2020). Parasitic Series Resistance for 4H-SiC and Diamond-Based IMPATT Diode at Ku Band. In: Dutta, D., Kar, H., Kumar, C., Bhadauria, V. (eds) Advances in VLSI, Communication, and Signal Processing. Lecture Notes in Electrical Engineering, vol 587. Springer, Singapore. https://doi.org/10.1007/978-981-32-9775-3_56

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  • DOI: https://doi.org/10.1007/978-981-32-9775-3_56

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  • Publisher Name: Springer, Singapore

  • Print ISBN: 978-981-32-9774-6

  • Online ISBN: 978-981-32-9775-3

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