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A Brief Review on Terahertz Avalanche Transit Time Sources

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Advanced Materials for Future Terahertz Devices, Circuits and Systems

Part of the book series: Lecture Notes in Electrical Engineering ((LNEE,volume 727))

Abstract

During last few years, numerous researches have been processed for the growth of reliable sources in the terahertz (THz) frequency regime. Among different solid-state sources, impact ionization avalanche transit time (IMPATT) diode is the most promising one for THz wave generation. Here, a selective review has been carried on THz IMPATT diode, which helps in detailed understanding of device operation in this domain. The paper mainly deals with several terahertz properties based on DC, noise, small and large-signal simulation of IMPATT devices. This study reveals the potency of this device in many THz applications.

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Authors and Affiliations

  1. Department of Electronics and Telecommunication Engineering, Indian Institute of Engineering Science and Technology, Shibpur, P.O.: Botanic Garden, Howrah, West Bengal, 711103, India

    S. J. Mukhopadhyay & M. Mitra

  2. Indian Institute of Space Science and Technology, Trivandrum Deemed University in Thiruvananthapuram, Valiamala Road, Valiamala, Kerala, 695547, India

    P. Hazra

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  1. S. J. Mukhopadhyay
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  3. M. Mitra
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Correspondence to S. J. Mukhopadhyay .

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Editors and Affiliations

  1. Department of Electronics and Communication Engineering, Cooch Behar Government Engineering College, Cooch Behar, India

    Aritra Acharyya

  2. Department of Electronics and Communication Engineering, Cooch Behar Government Engineering College, Cooch Behar, India

    Palash Das

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Mukhopadhyay, S.J., Hazra, P., Mitra, M. (2021). A Brief Review on Terahertz Avalanche Transit Time Sources. In: Acharyya, A., Das, P. (eds) Advanced Materials for Future Terahertz Devices, Circuits and Systems. Lecture Notes in Electrical Engineering, vol 727. Springer, Singapore. https://doi.org/10.1007/978-981-33-4489-1_4

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