Summary
This paper deals with a mathematical model of a SEM-EBIC experiment devised to measure the diffusion length of semiconductor materials. In the model the semiconductor material occupies a half-space, of which the plane bounding surface is partly covered by a semi-infinite current-collecting junction, the Schottky diode. A scanning electron microscope (SEM) is used to inject minority carriers into the material. It is assumed that injection occurs at a single point only. The injected minority carriers diffuse through the material and recombine in the bulk at a rate proportional to their local concentration. Recombination also occurs at the free surface of the material, not covered by the junction, where its rate is determined by the surface recombination velocity v. The mathematical model gives rise to a mixed-boundary-value problem for the diffusion equation, which is solved by means of the Wiener-Hopf technique. An analytical expression is derived for the measurable electron-beam-induced current (EBIC) caused by the minority carriers reaching the junction. The solution obtained is valid for all values of v, and special attention is given to the limiting cases v=∞ and v=0. Asymptotic expansions of the induced current, which are usable when the injection point is more than a few diffusion lengths away from the edge of the junction, are derived as well.
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References
R.A. Smith, Semiconductors, Cambridge University Press, Cambridge, 1959.
W.van Roosbroeck, Injected current carrier transport in a semi-infinite semiconductor and the determination of lifetimes and surface recombination velocities, J. Appl. Phys. 26 (1955) 380–391.
W.H. Hackett, Electron-beam excited minority-carrier diffusion profiles in semiconductors, J. Appl. Phys. 43 (1972) 1649–1654.
F. Berz and H.K. Kuiken, Theory of life time measurements with the scanning electron microscope: steady state, Solid-State Electron. 19 (1976) 437–445.
H.K. Kuiken, Theory of lifetime measurements with the scanning electron microscope: transient analysis, Solid-State Electron. 19 (1976) 447–450.
C.van Opdorp, Methods of evaluating diffusion lengths and near-junction luminescence-efficiency profiles from SEM scans, Philips Res. Repts. 32 (1977) 192–249.
C. Donolato, On the analysis of diffusion length measurements by SEM, Solid-State Electron. 25 (1982) 1077–1081.
H.J. Leamy, Charge collection scanning electron microscopy, J. Appl. Phys. 53 (1982) R51-R80.
S.M. Davidson and C.A. Dimitriadis, Advances in the electrical assessment of semiconductors using the scanning electron microscope, J. Microscopy 118 (1980) 275–290.
D.E. Ioannou, A SEM-EBIC minority-carrier lifetime-measurement technique, J. Phys. D: Appl. Phys. 13 (1980) 611–616.
D.E. Ioannou, C.A. Dimitriadis, A SEM-EBIC minority-carrier diffusionlength measurement technique, IEEE Trans, Electron Devices 29 (1982) 445–450.
A.E. Heins, The scope and limitations of the method of Wiener and Hopf, Comm. Pure Appl. Math. 9 (1956) 447–466.
J. Bazer and S.N. Karp, Propagation of plane electromagnetic waves past a shoreline, J. Res. Nat. Bur. Stand. 66 D (1962) 319–334.
T.B.A. Senior, Diffraction by a semi-infinite metallic sheet, Proc. Roy. Soc. (London) A 213 (1952) 436–458.
T.B.A. Senior, Half plane edge diffraction, Radio Sci. 10 (1975) 645–650.
T.B.A. Senior, Diffraction tensors for imperfectly conducting edges, Radio Sci. 10 (1975) 911–919.
B. Noble, Methods based on the Wiener-Hopf technique Pergamon Press, London, 1958.
H.K. Kuiken and C. van Opdorp, Evaluation of diffusion length and surface-recombination velocity from a plunar-collector geometry EBIC scan, to appear in J. Appl. Phys.
A. Erdélyi, W. Magnus, F. Oberhettinger and F.G. Tricomi, Tables of integral transforms, Vol. I, McGraw-Hill, New York, 1954.
G.D. Maliuzhinets, Excitation, reflection and emission of surface waves from a wedge with given face impedances, Sov. Phys. Dokl. 3 (1958) 752–755.
I.S. Gradshteyn and I.M. Ryzhik, Table of integrals, series and products, Academic Press, New York, (1965).
P.C. Clemmow, A note on the diffraction of a cylindrical wave by a perfectly conducting half-plane, Quart. J. Mech. Appl. Math. 3 (1950) 377–384.
L. Lewin, Polylogarithms and associated functions, Elscvier North Holland, New York, 1981.
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Boersma, J., Indenkleef, J.J.E. & Kuiken, H.K. A diffusion problem in semiconductor technology. J Eng Math 18, 315–333 (1984). https://doi.org/10.1007/BF00042845
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DOI: https://doi.org/10.1007/BF00042845