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SiGe band engineering for MOS, CMOS and quantum effect devices

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In this paper, we review recent progress in SiGe MOS technology. Progress in high mobility p-channel and n-channel devices will be presented as well as some of the materials and processing issues related to the fabrication of these heterostructures. In addition, we will present an outlook on the integration of these devices to complimentary MOS (CMOS) based on Si on Insulator technology (SOI). New directions of novel devices utilizing selective epitaxial growth and the integration of Si/Ge superlattices for enhanced performance in field effect transistors are described. Finally, we will examine some of the materials challenges of integrating SiGe technologies with current CMOS production processes.

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  1. Device Research Laboratory, Electrical Engineering Department, University of California, Los Angeles, 66-147 Engineering IV, 90095, Los Angeles, CA, USA

    K. L. Wang, S. G. Thomas & M. O. Tanner

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Wang, K.L., Thomas, S.G. & Tanner, M.O. SiGe band engineering for MOS, CMOS and quantum effect devices. J Mater Sci: Mater Electron 6, 311–324 (1995). https://doi.org/10.1007/BF00125886

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