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Carbon acceptor luminescence in type-I GaAs/AlAs ultrathin-layer superlattices

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Abstract

The luminescence associated with residual carbon acceptors in type-I (direct-gap) ultrathin-layer superlattices (UTLS) with well and barrier widths of 22.7<L z<25.2 Å and 11.5<L b<14.0 Å, respectively, is composed two lines reflecting the on-center and on-edge state of the impurities. In these narrow wells the on-center acceptor binding energy increases to 60 meV in agreement with theoretical calculations for GaAs single quantum wells using a valence band offset of 500 meV. While the binding energy of the on-center state does not vary significantly within the studied L z and L b range, the on-edge state shows a strong dependence on the very narrow barrier width. This increase of the acceptor binding energy makes the energy position of the impurity-related luminescence in UTLS very sensitive to the actual barrier height. Investigation of the impurity-related luminescence thus provides a versatile tool to determine the band offset ratio at the heterojunction.

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Author notes

  1. N. N. Ledentsov

    Present address: A.F. Ioffe Physico-Technical Institute, Leningrad, USSR

  2. N. Tsukada

    Present address: Mitsubishi Electric Corp., Central Res. Lab. Amagasaki, 661, Hyogo, Japan

Authors and Affiliations

  1. Max-Planck-Institut für Festkörperforschung, W-7000, Stuttgart 80, Fed. Rep. Germany

    N. N. Ledentsov, N. Tsukada & K. Ploog

Authors
  1. N. N. Ledentsov
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  2. N. Tsukada
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  3. K. Ploog
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Ledentsov, N.N., Tsukada, N. & Ploog, K. Carbon acceptor luminescence in type-I GaAs/AlAs ultrathin-layer superlattices. Appl. Phys. A 54, 261–264 (1992). https://doi.org/10.1007/BF00323847

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  • DOI: https://doi.org/10.1007/BF00323847

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