Abstract
The application of core and valence level photoelectron spectroscopy to the study of semiconductor heterojunctions and metal-semiconductor interfaces (Schottky barriers) is outlined, with an emphasis on recent results and their explanation in terms of current theories. While the determination of transport barriers (valence band offsets and Schottky barriers) is stressed, the identification of chemical reactions at the interface is also discussed using several examples. Photoemission can precisely determine many important quantities in these junctions; also demonstrated, however, is the disturbing influence of the photoemission process itself through the creation of a surface photovoltage in metal-semiconductor interfaces, and its possible consequences for recent investigations of Schottky barrier heights in metal overlayers on low temperature substrates.
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References
See the articles in Electronic Materials Vol. 5 of The Chemical Physics of Solid Surfaces and Heterogenous Catalysis, ed. by D.A. King, D.P. Woodruff (Elsevier, Amsterdam 1988)
A good source are the Proceedings of the Annual Conferences on the Physics and Chemistry of Semiconductor Interfaces, published each year in the Journal of Vacuum Science and Technology (July/August edition)
See the articles in Heterojunction Band Discontinuities: Physics and Device Applications, ed. by F. Capasso, G. Margaritondo (North-Holland, Amsterdam 1987)
F. Bechstedt, R. Enderlein: Semiconductor Surfaces and Interfaces (Akademie-Verlag, Berlin 1988)
E.H. Rhoderick, R.H. Williams: Metal-Semiconductor Contacts, 2nd ed. (Clarendon, Oxford 1988)
W. Mönch: J. Vac. Sci. Technol. B6, 1270 (1988)
E.W. Plummer, W. Eberhardt: Adv. Chem. Phys. 49, 529 (1983)
F.J. Himpsel: Adv. Phys. 53, 1 (1985)
N.V. Smith, F.J. Himpsel: In Handbook of Synchrotron Radiation, ed. by E.-E. Koch (North-Holland, Amsterdam 1983)
E. Spenke: Elektronische Halbleiter, 2nd edn. (Springer, Berlin, Heidelberg, 1965)
A. Many, Y. Goldstein, M. Grover: Semiconductor Surfaces (1968)
H. Kroemer: In Proceedings of the NATO Advanced Study Institute on Molecular Beam Epitaxy and Heterostructures, Eric, 1983, ed. by L.L. Chang, K. Ploog (Nijhoff, The Hauge 1985)
G. Duggan, (Chap. 5), D.J. Wolford, T.F. Keuch, M. Jaros (Chap. 6): In Heterojunction Band Discontinuities, Physics and Device Applications, ed. by F. Capasso, G. Margaritondo (North-Holland, Amsterdam 1987)
C.G. van der Walle, R.M. Martin: Phys. Rev. B35, 8154 (1987)
N.E. Christensen: Phys. Rev. B37, 4528 (1988)
E.H.C. Parker (ed.): The Technology and Physics of Molecular Beam Epitaxy (Plenum, New York 1985)
H. Haak, W.G. Wilke, K. Horn: To be published
P. Goldfinger, M. Jeunehomme: Trans. Faraday Soc. 59, 2851 (1963)
W.G. Wilke, K. Horn: J. Vac. Sci. Technol, B6, 1211 (1988)
W.G. Wilke, R. Seedorf, K. Horn: J. Vac. Sci. Technol. B7, 807 (1989)
D. Briggs, M.P. Seah: Practical Surface Analysis (Wiley, New York 1981)
D.E. Eastman, F.J. Himpsel: J. Vac. Sci. Technol. 20, 609 (1982)
M. Cardona, G. Güntherod (eds.): Light Scattering in Solids I-V, Topics Appl. Phys. Vols. 8, 50, 51, 54, 66 (Springer, Berlin, Heidelberg
R.L. Gunshor, M. Kobayashi, L.A. Kolodziejski, A.V. Nurmikko: J. Crystal Growth (To be published)
P.R. Bevington: Data Reduction and Error Analysis for the Physical Sciences (McGraw-Hill, New York 1969)
S.B. Doniach, M. Sunjic: J. Phys. C3, 285 (1970)
R.W.G. Wyckoff: Crystal Structures, 2nd ed. Vol. II. (Wiley, New York 1964), p. 22
N.G. Stoffel: Phys. Rev. B28, 3306 (1983)
M. Cardona, M. Weinstein, G.A. Wolff: Phys. Rev. A140, 633 (1965)
R.L. Anderson: Solid State Electron. 5, 341 (1962)
A.D. Katnani, G. Margaritondo: Phys. Rev. B28, 1944 (1983)
J.R. Waldrop, S.P. Kowalczyk, R.W. Grant, E.A. Kraut, D.L. Miller: J. Vac. Sci. Technol. 19, 573 (1981)
S.P. Kowalczyk, E.A. Kraut, J.R. Waldrop, R.W. Grant: J. Vac. Sci. Technol. 21, 482 (1981)
W.G. Wilke, Ch. Maierhofer, K. Horn: J. Vac. Sci. Technol. (in press)
H. Asonen, J. Lilja, A. Vuoristo, M. Ishiko, M. Pessa: Appl. Phys. Lett. 50, 733 (1987)
J.C. People, R. Bean: Appl. Phys. Lett. 47, 322 (1985)
V. Heine: Phys. Rev. A 138, 1698 (1965)
J. Tersoff: Phys. Rev. B 30, 4874 (1984); see also Chap. 1 of Ref. [3]
M. Cardona, N.E. Christensen: J. Vac. Sci. Technol. B 6, 1285 (1988) and references tcited therein
C. Tejedor, F. Flores: J. Phys. C 11, L 19 (1978)
N.E. Christensen, I. Gorczyca, O.B. Christensen, U. Schmid, M. Cardona: J. Crystal Growth (to be published)
S.M. Sze: Physics of Semiconductor Devices, 2nd edn. (Wiley, New York 1981)
P. Perfetti, C. Quaresima, C. Coluzza, C. Fortunato, G. Margaritondo: Phys. Rev. Lett. 57, 2065 (1986)
L.J. Brillson, G. Margaritondo: In Ref. [1] See the articles in
L.J. Brillson: Surf. Sci. Rep. 2, 123 (1982) W. Mönch: Advances in Solid State Physics (Vieweg, Braunschweig 1987) Festkörperprobleme (Advances in Solid State Physics) 26, 67 (1986)
A. Hiraki: Surf. Sci. Rep. 6, 74 (1986)
W.E. Spicer, T. Kendelewicz, N. Newman, K.K. Cin, I. Lindau: Surf. Sci. 1168, 240 (1986)
A.B. McLean, R. Ludeke: Phys. Rev. B 39, 6223 (1989)
M.R. Kelly, A. Kahn, N. Tache, E. Colavita, G. Margaritondo: Solid State Commun. 58, 429 (1986)
A.B. McLean, I.T. McGovern, C. Stephens, W.G. Wilke, H. Haak, K. Horn, W. Braun: Phys. Rev. B 38, 6330 (1988) and references therein
M. Alonso, R. Cimino, Ch. Maierhofer, Th. Chassé, W. Braun, K. Horn: J. Vac. Sci. Technol., in press
I.M. Vitomirov, C.M. Aldao, M. Schabel, G.D. Waddill, S.G. Anderson, J.H. Weaver: J. Vac. Sci. Technol. A 7, 758 (1989)
J.J. Yeh, I. Lindau: At. Data. Nucl. Data Tables 32, 1 (1985)
W. Schottky: Naturwissenschaften 26, 843 (1938)
N.F. Mott: Proc. Cambridge Philos. Sco. 34, 568 (1938)
J. Bardeen: Phys. Rev. 71, 717 (1947)
J. Tersoff: Phys. Rev. B 32, 6968 (1985)
C. Laubschat, M. Prietsch, M. Domke, E. Weschke, G. Remmers, T. Mandel, J.E. Ortega, G. Kaindl: Phys. Rev. Lett. 62, 1306 (1989)
W. Mönch: Phys. Rev. B 37, 7129 (1988)
J.E. Demuth, W.J. Thompson, N.J. DiNardo, R. Imbihl: Phys. Rev. Lett. 56, 1408 (1986)
P. John, T. Miller, T.C. Hsieh, A.P. Shapiro, A.L. Wachs, T.-C. Chiang: Phys. Rev. B 34, 6704 (1986)
P. Althainz, U. Myler, K. Jacobi: Phys. Rev. B 41, 2849 (1990)
M. Alonso, R. Cimino, K. Horn: Phys. Rev. Lett. 64, 1947 (1990)
H.C. Gatos, J. Lagowski: J. Vac. Sci. Technol. 10, 130 (1973)
G. Heiland, H. Lüth: Nuovo Cimento 39 B, 748 (1977)
M. Hecht: Phys. Rev. B 41, 7918 (1990); J. Vac. Sci. Technol. (to be published)
C.M. Aldao, S.G. Anderson, C. Capasso, I.M. Vitomirov, G.D. Waddill, J.H. Weaver: Phys. Rev. B 39, 12977 (1989)
I.M. Vitomirov, G.D. Waddill, C.M. Aldao, S.G. Anderson, C. Capasso, J.H. Weaver: Phys. Rev. B 39, 3483 (1989)
P. Chiaradia, M. Fanfoni, P. Nataletti, P. de Padova, R.E. Viturro, L.J. Brillson: J. Vac. Sci. Technol. B 7, 195 (1989)
C. Stephens, I.T. McGovern: Private communication
R. Cimino, M. Alonso, K. Horn: To be published
R. Ludeke, A.B. McLean, M. Prietsch: J. Vac. Sci. Technol. (to be published)
K.E. Miyano, R. Cao, T. Kendelewicz, A. Wahi, I. Lindau, W.E. Spicer: Phys. Rev. B 41, 1076 (1990)