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Gold and platinum diffusion: The key to the understanding of intrinsic point defect behavior in silicon

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Abstract

The study of gold and platinum diffusion is found to allow the separate observation of the intrinsic point defects, i.e., of silicon self-interstitials and of vacancies. The diffusion of gold in float zone (FZ) silicon is found to be dominated by the kick-out mechanism for temperatures of 800° C and higher. The diffusion of platinum in FZ silicon is described by the kick-out mechanism for temperatures above approximately 900° C, whereas for temperatures below approximately 850° C the dissociative mechanism governs platinum diffusion. As a result of numerical simulations, we suggest a complete and consistent set of parameters which describes the diffusion of platinum in silicon in the temperature range from 700° C to 950° C and the diffusion of gold in the temperature range from 800° C to 1100° C. The generation or recombination of self-interstitials and vacancies is found to be ineffective at least below 850° C. The concentration of substitutional platinum is determined by the initial concentration of vacancies at diffusion temperatures below 850° C. Platinum diffusion below 850°C can be used to measure vacancy distributions in silicon quantitatively.

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Author notes

  1. H. Zimmermann

    Present address: School of Engineering, Dept. of Mechanical Engineering and Materials Science, Duke University, 27706, Durham, NC, USA

  2. H. Ryssel

    Present address: Fraunhofer-Arbeitsgruppe für Integrierte Schaltungen, Artilleriestrasse 12, W-8520, Erlangen, Fed. Rep. Germany

Authors and Affiliations

  1. Lehrstuhl für Elektronische Bauelemente, Universität Erlangen-Nürnberg, Cauerstrasse 6, W-8520, Erlangen, Fed. Rep. Germany

    H. Zimmermann & H. Ryssel

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Zimmermann, H., Ryssel, H. Gold and platinum diffusion: The key to the understanding of intrinsic point defect behavior in silicon. Appl. Phys. A 55, 121–134 (1992). https://doi.org/10.1007/BF00334210

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