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Effect of deposition temperature on dielectric properties of PECVD Ta2O5 thin film

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Abstract

Tantalum oxide film formation by plasma-enhanced chemical vapour deposition (PECVD) using TaCl5 as a source material was examined. The effects of deposition temperature on the formation, structure and electric properties of the Ta2O5 film were investigated for Al/Ta2O5/ p-Si (MTS) capacitors. The deposition rate and refractive index increased with increasing deposition temperature. It was found that the structure of Ta2O5 deposited by PECVD was amorphous as-deposited. However, crystalline δ-Ta2O5 of hexagonal structure was formed by a 700 °C, 1 h heat treatment in argon. Capacitance and relative dielectric constant of the PECVD Ta2O5 were found to be 2.54 fF μm−2 and 23.5, respectively. The PECVD films obtained in this study have higher dielectric constants and remarkably better general film characteristics than those obtained by other deposition methods.

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Authors and Affiliations

  1. Department of Metallurgical Engineering, Hanyang University, San 13 Hangdang-dong, Sungdong-gu, 133-791, Seoul, Korea

    Hwan Seong Moon, Jae Suk Lee, Sung Wook Han & Jong Wan Park

  2. Samsung Advanced Institute of Technology, Korea

    Jae Hak Lee & Seung Kee Yang

  3. Electronics and Telecommunications Research Institute, Korea

    Hyung Ho Park

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  1. Hwan Seong Moon
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  2. Jae Suk Lee
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  3. Sung Wook Han
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  4. Jong Wan Park
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  5. Jae Hak Lee
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  7. Hyung Ho Park
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Moon, H.S., Lee, J.S., Han, S.W. et al. Effect of deposition temperature on dielectric properties of PECVD Ta2O5 thin film. JOURNAL OF MATERIALS SCIENCE 29, 1545–1548 (1994). https://doi.org/10.1007/BF00368923

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  • DOI: https://doi.org/10.1007/BF00368923

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