Abstract
The dynamical behaviour of Fabry-Perot type semiconductor lasers is modelled, including the relevant many-body Coulomb effects of the excited carriers. Conditions are given under which a parametrization of the full model is possible, allowing simple analytic relations for local gain, refractive index and linewidth enhancement factor. The parameters of the simplified model are uniquely determined by the microscopic theory and have to be optimized for the respective operating conditions. The theory is evaluated for bulk and quantum-well GaAs active material and a variety of laser structures, including strongly and weakly index-guided structures, as well as purely guided single-and twin-stripe lasers.
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Ru, P., Moloney, J.V., Indik, R. et al. Microscopic modelling of bulk and quantum-well GaAs-based semiconductor lasers. Opt Quant Electron 25, 675–693 (1993). https://doi.org/10.1007/BF00430557
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DOI: https://doi.org/10.1007/BF00430557