Abstract
The precipitation of silicon in rapidly solidified AlSi alloys was studied. For alloys with 2.4 and 11.0 wt % Si (2.3 and 10.3 at % Si, respectively) the lattice parameters of the Alrich and of the Si-rich phases were measured after ageing at 397,425 and 448 K. For alloys with 2.6 and 13.0 wt % Si crystallite sizes and lattice strains were determined by analysis of the X-ray diffraction line broadening. After ageing the lattice parameters of the Al-rich and the Si-rich phases were influenced by the difference in thermal expansion between both phases. After correction for this effect the amount of silicon dissolved in the Al-rich phase was estimated as a function of ageing time. Quenched-in (excess) vacancies influenced the precipitation kinetics. Activation energies for precipitation appeared to depend on the extent of transformation. Further, quenched-in vacancies caused anomalous maxima in the lattice parameter curves. The behaviour of the lattice microstrains on ageing was explained as a result of the disappearance of stresses due to quenching and the introduction and subsequent dissipation of stresses due to precipitation. After completed precipitation stresses due to the difference in thermal expansion between both phases still exist at room temperature.
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Van Mourik, P., Mittemeijer, E.J. & De Keijser, T.H. On precipitation in rapidly solidified aluminium-silicon alloys. J Mater Sci 18, 2706–2720 (1983). https://doi.org/10.1007/BF00547587
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DOI: https://doi.org/10.1007/BF00547587