Abstract
The influence of annealing at 700 to 1100° C on fracture strength of pre-cracked silicon wafers was examined by four-point bending tests at room temperature. The fracture strengths of the specimens annealed in oxygen increased significantly with increasing annealing temperature. On the other hand, annealing in vacuum showed little influence on the fracture strength. The strength increase by the annealing in oxygen was found to be caused by crack healing. Utilizing transmission electron microscopy, it is suggested that the crack surfaces were rebonded by the formation of a thin oxide layer at the crack interface. The activation energy for the crack healing was determined to be 2.0±0.1 eV, which was consistent with that of the reaction-limited growth of thin oxide film.
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Yasutake, K., Iwata, M., Yoshii, K. et al. Crack healing and fracture strength of silicon crystals. J Mater Sci 21, 2185–2192 (1986). https://doi.org/10.1007/BF00547968
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DOI: https://doi.org/10.1007/BF00547968