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A study of non-stoichiometry in gallium arsenide by precision lattice parameter measurements

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Abstract

An automatic method of precision lattice parameter measurement, capable of repeated measurement at intervals across single crystals with an accuracy of better than one part in 106, has been applied to gallium arsenide. The technique has been used to compare homogeneity of material grown from the melt with that prepared by vapour and liquid epitaxy, to study material grown from the melt under various pressures of arsenic, and to investigate the effect of heavy doping on the lattice parameter. The technique is shown to provide new and interesting information on defects in gallium arsenide.

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Authors and Affiliations

  1. Engineering Materials Laboratories, The University, Southampton, UK

    A. F. W. Willoughby & C. M. H. Driscoll

  2. Solid State Division, Atomic Energy Research Establishment, Harwell, UK

    B. A. Bellamy

Authors
  1. A. F. W. Willoughby
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  2. C. M. H. Driscoll
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  3. B. A. Bellamy
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Willoughby, A.F.W., Driscoll, C.M.H. & Bellamy, B.A. A study of non-stoichiometry in gallium arsenide by precision lattice parameter measurements. J Mater Sci 6, 1389–1396 (1971). https://doi.org/10.1007/BF00549684

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  • DOI: https://doi.org/10.1007/BF00549684

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