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Effect of laser irradiation on the electrical properties of amorphous germanium films

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Abstract

Amorphous films of germanium were grown using a vacuum evaporation technique, on glass substrates kept at room temperature. As-grown films were irradiated with Q-Switched Nd-YAG laser pulses (λ=1.06 μm, 20nsec, 10 to 50Jcm−2). The d.c. conductivity measurements were made in the temperature range 77 to 300 K. It was observed that the effect of laser irradiation was similar to the effect caused by the thermal annealing of the films. The d.c. conductivity data were analysed in the light of Mott's theory of a variable range hopping conduction process.

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  1. N. K. Sehgal

    Present address: Hans Raj College, University of Delhi, 110 007, Delhi, India

Authors and Affiliations

  1. Department of Electronics Science, University of Delhi, South Campus, Dhaula Kuan, 110021, Delhi, India

    G. P. Srivastava, K. N. Tripathi & N. K. Sehgal

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  1. G. P. Srivastava
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  2. K. N. Tripathi
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Srivastava, G.P., Tripathi, K.N. & Sehgal, N.K. Effect of laser irradiation on the electrical properties of amorphous germanium films. J Mater Sci 21, 2972–2976 (1986). https://doi.org/10.1007/BF00551518

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