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Thermal double donors in silicon

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Abstract

A family of double donors with only slightly differing binding energies can be generated in silicon containing oxygen. In the 30 years since they were discovered the microscopic structure of these defects has not been unravelled in spite of being investigated with all the tools of solid state physics.

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Wagner, P., Hage, J. Thermal double donors in silicon. Appl. Phys. A 49, 123–138 (1989). https://doi.org/10.1007/BF00616290

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