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Acceptor levels in indium selenide. An investigation by means of the Hall effect, deep-level-transient spectroscopy and photoluminescence

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Abstract

Acceptor levels related to I, II, IV, and V group impurities in indium selenide are studied by means of the Hall effect, deep-level-transient spectroscopy (DLTS) and photoluminescence. Activation energies for hole concentrations in the range from 200 to 300 meV have been measured. A reversible change of sign of the Hall voltage has been observed below 215 K. This behaviour can be explained through a model in which acceptor levels are assumed to be shallow and interlayer planar precipitates of ionized shallow donors create potential wells that behave as deep donors and in which a low concentration of bidimensional free electrons can exist. This model also explains the capacitance-voltage characteristics of both ITO/p-InSe and Au/p-InSe barriers. DLTS results are coherent with this model: hole traps in high concentration located about 570 meV above the valence band are detected. Photoluminescence also confirms the shallow character of acceptor levels. A broad band whose intensity is related to p conductivity appears in the PL spectra of low resistivity p-InSe. The shape and temperature dependence of this band can be explained through self-activated photoluminescence in a complex center in which the ground acceptor level must be at about 50 meV above the valence band.

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Authors and Affiliations

  1. Departamento de Termología, Facultat de Física, Departamento de Física Aplicada, Burjassot, Valencia, Spain

    A. Segura, M. C. Martínez-Tomás, B. Marí & A. Casanovas

  2. Laboratoire de Physique des Milieux très Condensés, 4 Place Jussieu, Tour 13, Paris Cedex 05, France

    A. Chevy

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  1. A. Segura
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  2. M. C. Martínez-Tomás
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  3. B. Marí
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  4. A. Casanovas
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  5. A. Chevy
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Segura, A., Martínez-Tomás, M.C., Marí, B. et al. Acceptor levels in indium selenide. An investigation by means of the Hall effect, deep-level-transient spectroscopy and photoluminescence. Appl. Phys. A 44, 249–260 (1987). https://doi.org/10.1007/BF00616698

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