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Process characterization and mechanism for laser-induced chemical vapor deposition of a-Si : H from SiH4

  • Laser-Induced Chemical Processing of Materials
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Abstract

The dependence of a-Si∶H film deposition by laser-induced decomposition of SiH4 on the different process variables is studied. The gas phase temperature in the beam center, produced by CO2 laser irradiation in parallel configuration, is estimated using a simple energy balance model. The surface temperature is measured with high accuracy employing a Ni sensor (250°–400 °C). The deposition rate and film properties such as the hydrogen content and the optical energy gap are determined as a function of these parameters. The production of H2 (≈10%), Si2H6 (≈2%), and Si3H8 in the gas phase during laser irradiation is proved by a mass spectrometric analysis. The chemical reaction processes induced in the gas phase and at the surface are discussed. A mechanism explaining the main features of the complicated chemistry involved is developed.

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Authors and Affiliations

  1. Institut für Physikalische Chemie, Universität, Im Neuenheimer Feld 253, D-6900, Heidelberg, Fed. Rep. Germany

    D. Metzger, K. Hesch & P. Hess

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  1. D. Metzger
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  2. K. Hesch
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  3. P. Hess
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Metzger, D., Hesch, K. & Hess, P. Process characterization and mechanism for laser-induced chemical vapor deposition of a-Si : H from SiH4 . Appl. Phys. A 45, 345–353 (1988). https://doi.org/10.1007/BF00617941

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