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A systematic analysis of defects in ion-implanted silicon

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Abstract

A classification scheme for the different forms of implant-related damage which arise upon annealing consisting of five categories is presented. Category I damage is “subthreshold” damage or that which results prior to the formation of an amorphous layer. If the dose is increased sufficiently to result in the formation of an amorphous layer then the defects which form beyond the amorphous/crystalline (a/c) interface are classified as category II (“end of range”) damage. Category III defects are associated with the solid phase epitaxial growth of the amorphous layer. The most common forms of this damage are microtwins, hairpin dislocations and segregation related defects. It is possible to produce a buried amorphous layer upon implantation, If this occurs, then the defects which form when the two a/c interfaces meet are termed category IV (“clamshell”, “zipper”) defects. Finally, category V defects arise from exceeding the solid solubility of the implanted species in the substrate at the annealing temperature. These defects are most often precipitates or dislocation loops.

In addition to presenting examples of this classification scheme, new results emphasizing category II, IV, and V defects will be presented. For category II defects, the source, dose and mass dependence as well as the influence of pre- and post-amorphization is discussed. The category IV defects which arise from buried amorphous layers in {100} oriented As implanted samples is presented. Half loop dislocations which arise during annealing of high dose As implants, are shown to originate in the category V defects and grow upon dissolution of As clusters and precipitates.

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  1. K. S. Jones

    Present address: Department of Materials Science and Engineering, University of Florida, 32611, Gainesville, FL, USA

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  1. Department of Materials Science and Mineral Engineering, University of California, 94720, Berkeley, CA, USA

    K. S. Jones, S. Prussin & E. R. Weber

  2. T.R.W. Electronics Group, 90278, Redondo Beach, CA, USA

    S. Prussin

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Jones, K.S., Prussin, S. & Weber, E.R. A systematic analysis of defects in ion-implanted silicon. Appl. Phys. A 45, 1–34 (1988). https://doi.org/10.1007/BF00618760

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