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Enhanced/suppressed interdiffusion of lattice-matched and pseudomorphic III–V heterostructures by controlling Ga vacancies

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Abstract

Data are presented showing that the interdiffusion of Ga and Al (AlGaAs-GaAs) and of Ga and In (pseudomorphic InGaAs-GaAs) at a heterojunction can be significantly enhanced or suppressed by controlling group III vacancies and interstitials. High resistivity low-temperature GaAs which contains excess As is shown to accelerate the interdiffusion process. The emission wavelength from monolayer-thick quantum wells can remain relatively unchanged even after annealing for 200 h at 850° C.

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Authors and Affiliations

  1. Department of Electrical and Computer Engineering, Center for Advanced Electronic Materials Processing, North Carolina State University, 27695-7911, Raleigh, NC, USA

    R. M. Kolbas, Y. L. Hwang, T. Zhang, M. Prairie, K. Y. Hsieh & U. K. Mishra

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  1. R. M. Kolbas
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  2. Y. L. Hwang
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  3. T. Zhang
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  4. M. Prairie
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  5. K. Y. Hsieh
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  6. U. K. Mishra
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Kolbas, R.M., Hwang, Y.L., Zhang, T. et al. Enhanced/suppressed interdiffusion of lattice-matched and pseudomorphic III–V heterostructures by controlling Ga vacancies. Opt Quant Electron 23, S805–S812 (1991). https://doi.org/10.1007/BF00624971

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  • DOI: https://doi.org/10.1007/BF00624971

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