Abstract
The transient relaxation of the normal state resistance in tin microstrips has been measured. The microstrips were current-biased below their dc critical current and excited into the normal state with electro optically produced current pulses, with durations as short as 600 psec, by temporarily exceeding the critical current. The effective relaxation time was measured by directly observing the voltage across the microstrip during the normal-superconducting transient. A region was observed in which the relaxation time decreased with increasing current pulse height. The relaxation time was found to be independent of temperature over the range 0.95⩾T/T c ⩾0.77.
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Butler, D.P., Hsiang, T.Y. & Mourou, G.A. Transient relaxation of the normal state resistance of tin microstrips in the presence of current bias. J Low Temp Phys 61, 69–78 (1985). https://doi.org/10.1007/BF00682731
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DOI: https://doi.org/10.1007/BF00682731