Abstract
The phase-conjugate reflectivity obtainable by degenerate four-wave mixing in silicon at a 1.06 μm is calculated including free-carrier absorption. A maximum reflectivity of more than 100% is possible. The dependence of the reflectivity on the signal and pump energy densities up to 70 mJ/cm2 is measured and found to agree with theory. The wave-front-correction property of DFWM is demonstrated with a lens in the signal beam.
This is a preview of subscription content, log in via an institution to check access.
Similar content being viewed by others
References
J.P. Woerdman, B. Bolger: Phys. Lett.30A 164 (1969)
J.P. Woerdman: Opt. Commun.2, 212 (1970)
K. Jarasiunas, J. Vaitkus: Phys. Status Solidi A44, 793 (1977)
R.K. Jain, M.B. Klein: Appl. Phys. Lett.35, 454 (1979)
R.K. Jain, M.B. Klein, R.C. Lind: Opt. Lett.4, 328 (1979)
R.K. Jain, M.B. Klein: “DFWM in Semiconductors” inOptical Phase Conjugation, ed. by R.A. Fischer (Academic, New York 1982)
H.J. Eichler, F. Massmann:Festkörperprobleme 18, (Vieweg, Braunschweig 1978) pp. 241–263
H.J. Eichler, F. Massmann: J. Appl. Phys.53, 3237 (1982)
K.G. Svantesson: J. Phys. D12, 425 (1979)
J.P. Woerdman: Phillips Res. Rep. (Suppl.)7, 11 (1971)
R.K. Jain: Opt. Eng.21, 199 (1982)
E.W. Van Stryland et al.: InPicosecond Phenomena III, ed. by K.B. Eisenthal, R.M. Hochstrasser, W. Kaiser, A. Lambeream, Springer Ser. Chem. Phys.23 (Springer, Berlin, Heidelberg 1982) p. 368
Author information
Authors and Affiliations
Rights and permissions
About this article
Cite this article
Eichler, H.J., Chen, J. & Richter, K. Four-wave mixing reflectivity of silicon at 1.06 μm: Influence of free-carrier absorption. Appl. Phys. B 42, 215–219 (1987). https://doi.org/10.1007/BF00693938
Received:
Accepted:
Issue Date:
DOI: https://doi.org/10.1007/BF00693938