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Degradation of thin films of YBa2Cu3O7 by annealing in air and in vacuum

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Abstract

The degradation of epitaxial thin films of YBa2Cu3O7 has been studied as a function of annealing temperature in air and in vacuum; some samples had an evaporated overlayer of CaF2. Degradation was monitored by the measurement of electrical properties after consecutive 30-min annealing treatments. The room-temperature resistance registered significant increases for all samples after annealing at temperatures above about 200°C; the critical current density at 77 K was degraded for annealing temperatures ≥400°C in air, and ≥200–250°C in vacuum. By annealing in oxygen at 550°C, electrical properties were restored in degraded bare YBCO samples annealed in vacuum, but not for those annealed in air.

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Authors and Affiliations

  1. GE Research and Development Center, 12301-0008, Schenectady, New York

    A. Mogro-Campero, K. W. Paik & L. G. Turner

Authors
  1. A. Mogro-Campero
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  2. K. W. Paik
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  3. L. G. Turner
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Mogro-Campero, A., Paik, K.W. & Turner, L.G. Degradation of thin films of YBa2Cu3O7 by annealing in air and in vacuum. J Supercond 8, 95–98 (1995). https://doi.org/10.1007/BF00732247

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  • DOI: https://doi.org/10.1007/BF00732247

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