Abstract
The14C self-diffusion coefficients for both lattice (D *lc ) and grain boundary (D *bc ) transport in high purity CVDβ-SiC are reported for the range 2128 to 2374 K. The Suzuoka analysis technique revealed thatD *bc is 105 to 106 faster thanD *bc ; the respective equations are given by
A vacancy mechanism is assumed to be operative for lattice transport. From the standpoint of crystallography and energetics, reasons are given in support of a path of transport which involves an initial jump to a vacant tetrahedral site succeeded by a jump to a normally occupied C vacancy.
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Hon, M.H., Davis, R.F. Self-diffusion of14C in polycrystalline β-SiC. J Mater Sci 14, 2411–2421 (1979). https://doi.org/10.1007/BF00737031
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DOI: https://doi.org/10.1007/BF00737031