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Silicon doping of MBE-grown GaAs films

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Abstract

Two concentration ranges of silicon doping in MBE-grown GaAs films have been investigated in some detail. In lightly doped films, with a free-electron concentration of ≈1016cm−3, low-temperature photoluminescence spectra have been analysed to develop a model to account for spectral features previously attributed to Ge and Si acceptor levels.

In heavily doped films, a maximum free-electron concentration of ≈7×1018 cm−3 has been obtained, which is only rather weakly dependent on growth conditions and the nature of the arsenic species (As2 or As4). Transmission electron microscopy has shown that no significant precipitation effects occur when higher Si fluxes are used but there is evidence for autocompensation. The maximum PL intensity (300 K) is found at a lower free electron concentration then with Sn-doped films, and is more sharply peaked, but there is no evidence for an anomalous Moss-Burstein shift.

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Author notes

  1. P. J. Dobson

    Present address: Department of Physics, Imperial College of Science and Technology, Prince Consort Road, SW7 2BT, London, England

Authors and Affiliations

  1. Philips Research Laboratories, RH1 5HA, Redhill, Surrey, England

    J. H. Neave, P. J. Dobson, J. J. Harris, P. Dawson & B. A. Joyce

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  1. J. H. Neave
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  2. P. J. Dobson
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  3. J. J. Harris
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  4. P. Dawson
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  5. B. A. Joyce
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Neave, J.H., Dobson, P.J., Harris, J.J. et al. Silicon doping of MBE-grown GaAs films. Appl. Phys. A 32, 195–200 (1983). https://doi.org/10.1007/BF00820260

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