Abstract
A new type of misfit dislocation multiplication is deduced from high-voltage electron micrographs of thin Ge layers on GaAs substrates. Two misfit dislocations with the same Burgers vectors on different glide planes cross and annihilate at the intersection point resulting in the formation of two angular dislocations. The tip of one of these dislocations may reach the growth surface by glide breaking into two separate dislocation segments. These segments may glide to form additional misfit dislocations, which may undergo the same multiplication process.
Similar content being viewed by others
References
F. C. Frank, J. H. van der Merve: Proc. Roy. Soc. A198, 216 (1949)
J. W. Matthews: Phil. Mag.13, 1207 (1966)
M. S. Abrahams, L. R. Weisberg, C. J. Buiocchi, J. Blanc: J. Mater. Sci.4, 223 (1969)
J. W. Matthews: InEpitaxial Growth, ed. by J. W. Matthews (Academic Press, New York 1975) p. 559
H. Strunk, W. Hagen, E. Bauser: Manuscript in preparation
W. Hagen, H. J. Queisser: Appl. Phys. Lett.32, 269 (1978)