Abstract
Electronic surface parameters of GaAs have been determined from a qualitative and quantitative analysis of the relative photoluminescence intensity at 300 K. Characteristics of etched (100) surfaces ofn- andp-type liquid phase epitaxial GaAs have been found to be governed by negative surface charges. A density of charged surface states of about 1012 cm−2 and a band bending of 0.59 eV have been found forn-type material with an electron concentration of 1.1×1017 cm−3. Forp-type samples with hole densities ranging from 6×1015 to 4.3×1018 cm−3 the estimated density of negatively charged surface states was below 2×1011 cm−2, and the band bending was not more than a few kT.
Similar content being viewed by others
References
J.Vilms, W.E.Spicer: J. Appl. Phys.36, 2815 (1965)
N.N.Winogradoff: Phys. Rev.138 A1562 (1965)
R.E.Hetrick, K.F.Yeung: J. Appl. Phys.42, 2882 (1971)
U.Langmann: Appl. Phys.1, 219 (1973)
R.Nink: Z. Naturforsch.24a, 1329 (1969)
T.O.Sedgwick: J. Electrochem. Soc.121, 452 (1974)
D.B.Wittry, D.F.Kyser: J. Phys. Soc. Japan21, 312 (1966)
For a review see, e.g., E.W.Williams, H.B.Bebb: In:Semiconductors and Semimetals vol. 8, ed. by R.K.Willardson and A.C.Beer (Academic Press, New York 1972) pp. 321–391
C.J.Hwang: Phys. Rev.B6, 1355 (1972)
H.C.Casey Jr., B.I.Miller, E.Pinkas: J. Appl. Phys.44, 1281 (1973) Many other papers are reviewed in this article
G.A.Acket, W.Nijman, H.'tLam: J. Appl. Phys.45, 3033 (1974)
H.C.Casey Jr., F.Stern.: J. Appl. Phys.47, 631 (1976)
The author is indebted to K.-H. Zschauer and to A. Vogel for supplying the gallium arsenide layers
L.K.Galbraith, T.E.Fischer: Surface Sci.30, 185 (1972)
D.R.Frankl:Electrical Properties of Semiconductor Surfaces (Pergamon Press, New York 1967) pp. 89–92
M.D.Sturge: Phys. Rev.127, 768 (1962)
D.D.Sell, H.C.Casey Jr.: J. Appl. Phys.45, 800 (1974)
H.C.CaseyJr., D.D.Sell, K.W.Wecht J. Appl. Phys.46, 250 (1975)
T.Ota, K.Oe, M.Yamaguchi: J. Appl. Phys.46, 3674 (1975)
G.Lengyel, K.-H.Zschauer: Siemens Forsch.-u. Entwickl. Ber.4, 265 (1975)
A.Many, Y.Goldstein, N.B.Grover:Semiconductor Surfaces, 1st and 2nd printing 1971 (North-Holland Publishing Company, Amsterdam 1965) pp. 194–201
D.V.Lang, C.H.Henry: Phys. Rev. Lett.35, 1525 (1975)
W.L.Bontsch-Brujewitsch, I.P.Swjagin, I.W.Karpenko, A.G.Mironow:Aufgabensammlung zur Halbleiterphysik (C.F. Winter, Basel; Vieweg, Braunschweig 1970), p. 113
C.J.Hwang, J.C.Dyment: J. Appl. Phys.44, 3240 (1973)