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An investigation of the Al2O3-CdSe interface in accumulation

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Abstract

The Al2O3−CdSe interface of a thin-film transistor is investigated in the frequency range 30 Hz-30 kHz under weak depletion and accumulation. The surface states are, most likely, located in the insulator Al2O3 with a concentration varying from 4·1018 to 1019 cm−3 eV−1. The surface states have a negligible influence on the thin-film transistor operation.

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Authors and Affiliations

  1. Laboratory of Electronics, Ghent State University, Ghent, Belgium

    A. van Calster

  2. Department of Physics, Nankai University, Tianjin, The People's Republic of China

    Li Yu-Min

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  1. A. van Calster
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  2. Li Yu-Min
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van Calster, A., Yu-Min, L. An investigation of the Al2O3-CdSe interface in accumulation. Appl. Phys. 23, 327–331 (1980). https://doi.org/10.1007/BF00914919

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  • DOI: https://doi.org/10.1007/BF00914919

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