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Diffusion of selenium and tellurium in silicon

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Abstract

Diffusion of selenium and tellurium in silicon has been investigated in the temperature range 1000°C to 1310°C by sheet conductivity. For Si∶SeD 0= 0.3±0.1 cm2/s andh=2.6±0.1 eV, and for Si∶TeD 0=0.9±0.3 cm2/s and h=3.3±0.1eV have been obtained. The surface concentrations for both dopants were of the order of 5 × 1013 to 6×1016cm−3. The Hall coefficient leads to an energy level of 300±15meV for selenium and 200±20meV for tellurium.

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  1. Fachbereich Physik, Universität, D-4790, Paderborn, Fed. Rep. Germany

    H. Stümpel, M. Vorderwülbecke & J. Mimkes

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  1. H. Stümpel
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  2. M. Vorderwülbecke
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  3. J. Mimkes
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Stümpel, H., Vorderwülbecke, M. & Mimkes, J. Diffusion of selenium and tellurium in silicon. Appl. Phys. A 46, 159–163 (1988). https://doi.org/10.1007/BF00939258

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