Abstract
The voltage responsivity of videodetectors using submicron GaAs Schottky diodes has been investigated in the 0.7–3.7 THz range. Incident submillimeter power level, DC bias and video-load influences are discussed within the framework of existing theories. Various diodes types differing in semiconductor parameter values as well as junction geometries are compared. The submillimeter frequency response is studied and interpreted in terms of plasma resonance effects in the epilayer.
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Equipe associée au CNRS (ERA 365)
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Kreisler, A., Pyée, M. & Redon, M. Parameters influencing far infrared videodetection with submicron-size Schottky diodes. Int J Infrared Milli Waves 5, 559–584 (1984). https://doi.org/10.1007/BF01010152
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DOI: https://doi.org/10.1007/BF01010152