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Semiconducting behaviour of thin bismuth films vacuum-deposited at different substrate temperatures

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Abstract

Thin bismuth films (thickness 25 nm) have been vacuum-deposited onto glass substrates at different substrate temperatures in a vacuum of 2×10−5 torr. The resistance of the films has been measured as a function of temperaturein situ during and after annealing. It is found that the resistance of all the annealed films decreases with increasing temperature thus showing a semiconducting type of behaviour. The films do not show a resistivity minimum observed in thicker films [1]. The absence of a resistivity minimum is attributed to the thinness of the films and consequent larger energy band gap and smaller grain size.

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References

  1. V. Damodara Das andN. Jayaprakash,Vacuum 31 (1981) 133.

    Google Scholar 

  2. M. Gurevitch,J. Low Temperature Phys. 38 (1980) 777.

    Google Scholar 

  3. H. J. Goldsmid,Phys. Status Solidi (a) 1 (1970) 7.

    Google Scholar 

  4. V. N. Lutskii,ibid. 1 (1970) 199.

    Google Scholar 

  5. H. Asahi andA. Kinbara,Thin Solid Films 66 (1980) 202.

    Google Scholar 

  6. YU. F. Komnik andV. V. Adrievsky,ibid. 62 (1979) 209.

    Google Scholar 

  7. V. Damodara Das andM. S. Jagadeesh,J. Vac. Sci. Tech. 19 (1981) 89.

    Google Scholar 

  8. A. L. Jain,Phys. Rev. 114 (1959) 1518.

    Google Scholar 

  9. L. Esaki,J. Phys. Soc. Jpn. 21 Suppl. (1966) 89.

    Google Scholar 

  10. V. S. Sandomirskii,Sov. Phys. JETP 16 (1963) 1630.

    Google Scholar 

  11. Idem, ibid. 25 (1967) 101.

    Google Scholar 

  12. L. V. Iogansen,ibid. 23 (1966) 470.

    Google Scholar 

  13. D. D. Thoruburg andC. M. Wayman,Phil Mag. 20 (1969) 153.

    Google Scholar 

  14. V. Damodara Das andS. Vaidehi,Phys. Status Solidi (a) 71 (1982) 351.

    Google Scholar 

  15. V. Damodara Das andM. S. Jagadeesh,J. Phys. Chem. Solids 38 (1977) 167.

    Google Scholar 

  16. V. Damodara Das andN. Jayaprakash,J. Mater. Sci. 17 (1982) 1369.

    Google Scholar 

  17. K. L. Chopra, “Thin Film Phenomena” (McGrawHill, New York, 1969) p. 183.

    Google Scholar 

  18. C. A. Neugebauer, “Physics of Thin Films” Vol. 2, edited by G. Hass and R. E. Thun (Academic Press, New York, 1964) p. 11.

    Google Scholar 

  19. Idem, in “Handbook of Thin Film Technology”, edited by L. I. Maissel and R. Glang (McGraw-Hill Publications, New York, 1979) pp. 8–41.

    Google Scholar 

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Authors and Affiliations

  1. Thin Film Laboratory, Department of Physics, Indian Institute of Technology, 600 036, Madras, India

    V. Damodara Das & S. Vaidehi

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  1. V. Damodara Das
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  2. S. Vaidehi
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Das, V.D., Vaidehi, S. Semiconducting behaviour of thin bismuth films vacuum-deposited at different substrate temperatures. J Mater Sci 19, 1185–1190 (1984). https://doi.org/10.1007/BF01120028

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  • DOI: https://doi.org/10.1007/BF01120028

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