Structural properties of ZnS_xSe_1−x thin films on GaAs (1 1 0) substrate

Abstract

Deposition and structural characterization of lattice-matched ZnS _x Se_1−x (x=0.056) films on GaAs (1 1 0) and glass substrates by a new chemical growth technique have been investigated by transmission electron microscopy and X-ray diffraction, including low-angle X-ray diffraction, at different temperatures. Electron diffraction examination has revealed that ZnS _x Se_1−x films exhibit an amorphous nature when deposited at room temperature, and at 90 °C the films are polycrystalline with a large grain size. X-ray diffraction and morphology showed that the growth of the crystallite size increased with increasing solvent temperature. The chemical data from X-ray fluorescence confirm the enhancement of sulphur content at the interface and also establish the composition.