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Chemical etching of (100) GaAs in a sulphuric acid-hydrogen peroxide-water system

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Abstract

A detailed investigation of the etching of (100) GaAs in H2SO4-H2O2-H2O systems has been made. The influence of the concentration of particular etchant components on etching rate and on the shape of the crystal surface was examined. From these results the Gibbs' triangle of etching bath compositions was divided into parts corresponding to the various states of the crystal surfaces and various etching mechanisms. The shape of the crystal surface after etching was closely related to the profiles of the grooves etched in the [110] direction in the same solution.

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Authors and Affiliations

  1. Institute of Electronic Technology of the Technical University of Wrocław, Wybrzeże Wyspiańlskiego 27, 50370, Wrocław, Poland

    Irena Barycka & Irena Zubel

Authors
  1. Irena Barycka
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  2. Irena Zubel
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Barycka, I., Zubel, I. Chemical etching of (100) GaAs in a sulphuric acid-hydrogen peroxide-water system. J Mater Sci 22, 1299–1304 (1987). https://doi.org/10.1007/BF01233125

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  • DOI: https://doi.org/10.1007/BF01233125

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