Abstract
Using the random phase approximation and the Yafet wave functions the inter and intraband static dielectric functions of degenerate zero-gap semiconductors placed in a magnetic field are calculated in the long wavelength limit.
It is shown that the values of the dielectric function for gapless semiconductors differ considerably from the result obtained previously for the one-band model with parabolic energy dispersion ands-type wave functions.
Finally the dielectric function is used to find the static screening of a point impurity charge.
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Krupski, J. Magnetic field dependent dielectric function for zero-gap semiconductors. Z. Physik B - Condensed Matter 43, 111–117 (1981). https://doi.org/10.1007/BF01293603
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DOI: https://doi.org/10.1007/BF01293603