Abstract
We report measurements of the electrical resistivityρ, the thermal conductivityk and the thermoelectric powerS between 1.5K and 300K on the anomalous CeCu2Si2 compound and on LaCu2Si2 as reference compound. For LaCu2Si2 the temperature dependences ofρ andS are in accord with those found in otherd band metals. For CeCu2Si2 the observed resistivity (ρ≃220 µΩ cm at 200K) leads to a very short electronic mean free path which is of the order of the Ce-Ce spacing. Correspondingly,k is almost identical with the phonon contributionk p . Below 20K, resistivity and thermoelectric power strongly suggest Fermi liquid behavior with a “degeneracy temperature” between 20K and 40K. Above 200K, bothρ andS decrease proportionally to −ln(T/1 K).
Similar content being viewed by others
References
Sales, B.C., Viswanathan, R.: J. Low Temp. Phys.23, 449 (1976)
Bredl, C.D., Steglich, F., Schotte, K.D.: Z. Physik B29, 327 (1978)
Holland-Moritz, E.: Ph. D. Thesis, University of Cologne, 1978 (unpublished)
Holland-Moritz, E., Loewenhaupt, M., Schmatz, W., Wohlleben, D.K.: Phys. Rev. Lett.38, 983 (1977)
Loewenhaupt, M., Steglich, F.: Physica87B, 187 (1977)
Moeser, J.H., Steglich, F.: Z. Physik B21, 165 (1975)
See for instance: Dunlop, J.B., Grüner, G., Napoli, F.: Solid State Commun.15, 13 (1974)
Carter, R., Davidson, A., Schroeder, P.A.: J. Phys. Chem. Solids31, 2374 (1970)
Tee, K.T., Meaden, G.T.: J. Low Temp. Phys.9, 447 (1972)
Leibfried, G., Schlömann, E.: Nachr. Akad. Wiss. Göttingen2a, 71 (1954); see also: Laubitz, M.J.: Can. J. Phys.45, 3677 (1967)
Rieger, W., Parthé, E.: Mh. Chem.100, 444 (1969)
Ackerman, M.W., Wu, K.Y., Ho, C.Y.: Proc. 14th Int. Conf. on Thermal Conductivity, Klemens, P.G., Chu, T.K., eds., Storrs, Connecticut (1975), p. 245
Karamargin, M.C., Reynolds, C.A., Lipschultz, F.P., Klemens, P.G.: Phys. Rev. B6, 3624 (1972)
Kapoor, A., Rowlands, J.A., Woods, S.B.: Phys. Rev. B9, 1223 (1974)
Mott, N.F.: Phil. Mag.30, 403 (1974)
Friedel, J.: Nuovo Cimento, Suppl.7, 287 (1958)
Edelstein, A.S., Tranchita, C.J., McMasters, O.D., Gscheidner, Jr., K.A.: Solid State Commun.15, 81 (1974)
Andres, K., Graebner, J.E., Ott, H.R.: Phys. Rev. Lett.35, 1779 (1975)
See, for instance: Winzer, K.: Z. Physik265, 139 (1973)
Cornut, B., Coqblin, B.: Phys. Rev. B5, 4541 (1972)
van Aken, P.B., van Daal, H.J., Buschow, K.H.J.: Phys. Lett.49A, 201 (1974)
Franz, W.: Diplom Thesis, University of Cologne, 1975 (unpublished). Steglich, F. in: Festkörperprobleme (Advances in Solid State Physics), Vol. XVII, p. 319. Treusch, J., ed., Braunschweig: Vieweg 1977
Buschow, K.H.J., van Daal, H.J.: Solid State Commun.8, 363 (1970)
Bhattacharjee, A.K., Coqblin, B.: Phys. Rev. B13, 3441 (1976)
Schriempf, J.T.: Phys. Rev. Lett.19, 1131 (1967); Phys. Rev. Lett.20, 1034 (1968)
Schriempf, J.T., Schindler, A.I., Mills, D.L.: Phys. Rev.187, 959 (1969)
Wagner, D.K., Garland, J.C., Bowers, R.: Phys. Rev. B3, 3741 (1971)
Steglich, F.: Z. Physik B23, 331 (1976)
Author information
Authors and Affiliations
Additional information
Work performed within the research program of the Sonderforschungsbereich 125 Aachen/Jülich/Köln
Rights and permissions
About this article
Cite this article
Franz, W., Grießel, A., Steglich, F. et al. Transport properties of LaCu2Si2 and CeCu2Si2 between 1.5K and 300K. Z Physik B 31, 7–17 (1978). https://doi.org/10.1007/BF01320122
Received:
Issue Date:
DOI: https://doi.org/10.1007/BF01320122