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The effect of self-absorption on cyclotron resonance radiation in semiconductors

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Zeitschrift für Physik B Condensed Matter

Abstract

The influence of self-absorption on line width of an emitted cyclotron resonance line was studied for the first time. The investigated line corresponds to a radiative Landau level transition inn-InSb atB= 1.2T. The self-absorption was determined by varying the sample thickness. It is shown that the measured line width is strongly influenced by self-absorption provided that the product of absorption coefficient and sample thickness is not smaller than 1. Our analysis revealed that all data on linewidth published up to now were determined by self-absorption and thus are inadequate for comparison with theoretical results.

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Authors and Affiliations

  1. II. Physikalisches Institut, Universität zu Köln, Zülpicher Straße 77, D-5000, Köln 41, Germany

    R. Dornhaus, G. Nimtz & E. Tyssen

Authors
  1. R. Dornhaus
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  2. G. Nimtz
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  3. E. Tyssen
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Dornhaus, R., Nimtz, G. & Tyssen, E. The effect of self-absorption on cyclotron resonance radiation in semiconductors. Z Physik B 23, 135–137 (1976). https://doi.org/10.1007/BF01352706

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  • DOI: https://doi.org/10.1007/BF01352706

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