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The influence of thes-f interaction on the conduction band behaviour in ferromagnetic semiconductors. A theory of the red shift effect

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Zeitschrift für Physik B Condensed Matter

Abstract

The effects of thes-f interaction on the atomic levels and on the bandwidths are calculated for narrow and broad conduction bands in ferromagnetic semiconductors. The temperature variation of the bottom of the conduction band (optical absorption edge) is calculated for any temperature, with main emphasis on the domain around the Curie point, where the red shift effect is experimentally more evident. Thes-f hamiltonian is approximately diagonalized by a canonical transformation (an infinite summation of the series is performed in one-electron approximation). For broad bands, the effects are governed by the homogeneous magnetization and consequently are sharp atT c . For narrow bands, the local polarization of the magnetic lattice induced by the electronic spin becomes important and the temperature variation of the absorption edge is smooth aroundT c , similar to the experimental curves.

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Authors and Affiliations

  1. Institute of Physics and Technology of Materials, Bucharest, Romania

    A. Aldea & E. Teleman

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  1. A. Aldea
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  2. E. Teleman
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Aldea, A., Teleman, E. The influence of thes-f interaction on the conduction band behaviour in ferromagnetic semiconductors. A theory of the red shift effect. Z Physik B 37, 135–141 (1980). https://doi.org/10.1007/BF01365369

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  • DOI: https://doi.org/10.1007/BF01365369

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