Abstract
Numerical analysis of the characteristics of silicon solar cells underγ-ray or fast neutron irradiation is presented. The degradation of spectral response, short-circuit current, maximum power, open-circuit voltage and curve power factor are discussed. The calculation is based on estimating the minority carrier lifetime by the Shockley-Read equation, assuming the introduction rate, capture cross-section and the energy level to be equal to those of various predominant recombination centres, such as E-centre (phosphorus-vacancy complex), A-centre (oxygen-vacancy complex) and J′-centre (boron-vacancy complex) inγ-irradiated silicon single crystals. The simulated results show good agreement with experiment for N-type F·Z and C·Z bulk crystals with E-centres, and for P-type C·Z bulk crystal with J′-centres.
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Usami, A. Predicted effects of gamma and neutron irradiation on silicon solar cells. Opto-electronics 5, 223–236 (1973). https://doi.org/10.1007/BF01421787
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DOI: https://doi.org/10.1007/BF01421787