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Photoluminescence studies in bulk gallium antimonide

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Abstract

A detailed analysis of Photo Luminescence spectroscopy (PL) on undoped and Te- and Zn-doped samples of high-quality GaSb is presented. Temperature variations of PL peak position and intensity have been used to find the origin of various transitions. The PL peaks of undoped samples have been assigned to unintentional impurities, native defects and excitons bound to the defect. The zinc- and tellurium-related peaks have been identified and the effect of doping concentration on their position and PL efficiency have been studied.

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Authors and Affiliations

  1. Department of Physics, Indian Institute of Science, 560 012, Bangalore, India

    P.S. Dutta, K.S.R. Koteswara Rao & H.L. Bhat

  2. Solid State Physics Laboratory, Lucknow Road, 110 054, Delhi, India

    V. Kumar

Authors
  1. P.S. Dutta
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  2. K.S.R. Koteswara Rao
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  3. H.L. Bhat
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  4. V. Kumar
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Correspondence to H.L. Bhat.

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Dutta, P., Koteswara Rao, K., Bhat, H. et al. Photoluminescence studies in bulk gallium antimonide. Appl. Phys. A 61, 149–152 (1995). https://doi.org/10.1007/BF01538381

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  • DOI: https://doi.org/10.1007/BF01538381

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