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Doping of amorphous silicon by ion implantation: Electrical, optical and photoelectrical properties

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Abstract

Results of electrical, optical and photoelectrical properties of a-Si and a-Si(H) doped by means of ion implantation of Ga and N respectively show that the hydrogenated Si can be doped with higher efficiency. Ga seems to be built in the amorphous network as an acceptor and N in the form of (Si-N)x complexes.

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Authors and Affiliations

  1. Institute of Physics, Czechosl. Acad. Sci., Prague, Na Slovance 2, 180 40, Praha 8, Czechoslovakia

    M. Závětová & J. Zemek

  2. Institute of Physics, Acad. Sci. of the USSR, Moscow

    I. Akimchenko

Authors
  1. M. Závětová
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  2. J. Zemek
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  3. I. Akimchenko
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Additional information

We thank Drs. Koc, Vorlíček, Krasnopevcev and Gregora for stimulating discussions and Mrs Šůlová and Miss Håjková for technical assistence.

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Závětová, M., Zemek, J. & Akimchenko, I. Doping of amorphous silicon by ion implantation: Electrical, optical and photoelectrical properties. Czech J Phys 31, 744–751 (1981). https://doi.org/10.1007/BF01596329

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  • DOI: https://doi.org/10.1007/BF01596329

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