Abstract
The ionization energy of the deep donor states due to oxygen and of the acceptor levels due to compensating VA1 vacancies were determined from the optical properties of AlN:O. The theoretical calculations together with the experimental data (the emission spectra, the excitation of luminescence spectra and EPR data) indicate that the deepest donor level belongs to the ion O−.
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The authors are very grateful to dr. J.Pastrnák for his interest in this work and helpful discussion of results. We are also indebted to dr. J.Málek for critical reading of the manuscript and valuable comments.
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Pačesová, S., Jastrabík, L. Radiative recombination at deep impurity centres in AlN:O. Czech J Phys 29, 913–923 (1979). https://doi.org/10.1007/BF01596369
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DOI: https://doi.org/10.1007/BF01596369