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The edge admittance model for the study of microstrips on uniaxial substrate

Untersuchung von Microstrip-Strukturen auf einachsig anisotropem Substratmaterial mit dem Edge-Admittance-Modell

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Contents

The edge admittance model of a microstrip structure is applied for a semi infinite conductor over a grounded uniaxial substrate using the Wiener-Hopf technique. Explicit expressions for all the scattered field components, as well as for the surface wave modes characteristic equations, are given. The TEM wave reflection coefficient in a simple closed form expression is developed, utilizing a thin substrate approximation. The effects of the anisotropy ratio on this reflection coefficient and on the characteristics of a rectangular microstrip antenna are examined.

Übersicht

Das Edge-Admittance-Modell einer Microstrip-Struktur wird unter Benutzung der Wiener-Hopf-Methode auf einen halbseitig unendlich ausgedehnten Leiter über einem rückseitig kaschierten, einachsig anisotropen Substrat angewendet. Die Ausdrücke sowohl für die gestreuten Feldkomponenten als auch für die charakteristischen Gleichungen der Oberflächenwellen-Moden werden angegeben. Mit Hilfe der für dünne Substrate gültigen Näherung wird der Reflexionskoeffizient der TEM-Welle als einfacher geschlossener Ausdruck hergeleitet. Die Auswirkung des Anisotropie-Verhältnisses auf diesen Reflexionskoeffizienten und auf die Charakteristik einer rechteckigen Microstrip-Antenne werden untersucht.

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Authors and Affiliations

  1. Dept. of Electrical Engineering, Demokritos University of Thrace, 67100, Xanthi, Greece

    George A. Kyriacou

  2. Dept. of Physics, University of Thessaloniki, 54006, Thessaloniki, Greece

    John N. Sahalos

Authors
  1. George A. Kyriacou
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  2. John N. Sahalos
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Kyriacou, G.A., Sahalos, J.N. The edge admittance model for the study of microstrips on uniaxial substrate. Archiv f. Elektrotechnik 76, 169–179 (1993). https://doi.org/10.1007/BF01597596

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  • DOI: https://doi.org/10.1007/BF01597596

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