Abstract
The potential distribution in films the thickness of which is equal to or smaller than the Debye length is derived from Poisson's equation under general boundary conditions. It is shown that there exist three basic forms of this distribution depending on the densities and character of charges on both surfaces, on the geometrical thickness of the thin film and on the Debye length of the semiconductor.
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Abbreviations
- E S 1,E S 2:
-
dimensionless surface field intensities
- F 1 F 2 :
-
space-charge functions
- L D :
-
Debye length
- k :
-
Boltzmann's constant
- n b :
-
bulk electron density
- N S 1,N S 2:
-
concentration of surface charges
- p b :
-
bulk hole density
- q :
-
electron charge
- T :
-
absolute temperature
- δ :
-
thickness of thin film measured in Debye lengths
- ζ :
-
coordinate perpendicular to the surface measured in Debye lengths
- ɛ 0 :
-
permittivity of free space
- ɛ s :
-
relative permittivity of semiconductor
- ψ :
-
dimensionless potential (multiples of kT/q)
- E cb :
-
energy of bulk conduction-band edge
- E c :
-
energy of conduction-band edge
- E i :
-
energy line that runs parallel to band edges and coincides in the bulk (assumed homogeneous) withE ib , the intrinsic Fermi level
- E v :
-
energy of valence-band edge
- E vd :
-
energy of bulk valence-band edge
- V :
-
potential
References
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Garrett C. G. B., Brattain W. H.: Phys. Rev.99 (1955), 376.
Lashkarev V. E.: Izv. akad. nauk16 (1952), 203.
Sébenne C., Balkanski M.: Srf. Sci.1, (1964), 42.
Gasanov L. S.: Rad. i elektr.12 (1967), 1524.
Frankl D. R.: Electrical Properties of Semiconductor Surfaces. Pergamon Press 1967, 42.
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Jerhot, J., Šnejdar, V. A contribution to the theory of the space-charge region in thin semiconductor monocrystalline films. Czech J Phys 20, 903–907 (1970). https://doi.org/10.1007/BF01691083
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DOI: https://doi.org/10.1007/BF01691083