Abstract
An energy-transport model is rigorously derived from the Boltzmann transport equation of semiconductors under the hypothesis that the energy gain or loss of the electrons by the phonon collisions is weak. Retaining at leading order electron-electron collisions and elastic collisions (i.e., impurity scattering and the “elastic part” of phonon collisions), a rigorous diffusion limit of the Boltzmann equation can be carried over, which leads to a set of diffusion equations for the electron density and temperature. The derivation is given in both the degenerate and nondegenerate cases.
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Ben Abdallah, N., Degond, P. & Genieys, S. An energy-transport model for semiconductors derived from the Boltzmann equation. J Stat Phys 84, 205–231 (1996). https://doi.org/10.1007/BF02179583
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DOI: https://doi.org/10.1007/BF02179583