Abstract
Microstructures of oxide scales on SiC single crystals, produced by oxidation at 1400° C for various lengths of time, were studied by light and transmission electron microscopy and by X-ray diffraction. At short oxidation times the oxide films were amorphous; at longer times they consisted of spherulitic cristobalite. The cristobalite is thought to grow by devitrification of the amorphous phase. No significant difference in oxide scale thickness or structures was found between commercial purity and semiconductor grade crystals.
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Ogbuji, L.U. Development of oxide scale microstructure on single-crystal SiC. J Mater Sci 16, 2753–2759 (1981). https://doi.org/10.1007/BF02402838
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DOI: https://doi.org/10.1007/BF02402838